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Cited 144 time in webofscience Cited 146 time in scopus
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Origin of New Broad Raman D and G Peaks in Annealed Graphene SCIE SCOPUS

Title
Origin of New Broad Raman D and G Peaks in Annealed Graphene
Authors
Hong, JPark, MKLee, EJLee, DHwang, DSRyu, S
Date Issued
2013-09-19
Publisher
NPG
Abstract
Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its property is very sensitive to materials contacting the surface. Herein, we report novel Raman peaks observed in annealed graphene and elucidate their chemical origins by Raman spectroscopy and atomic force microscopy (AFM). Graphene annealed in oxygen-free atmosphere revealed very broad additional Raman peaks overlapping the D, G and 2D peaks of graphene itself. Based on the topographic confirmation by AFM, the new Raman peaks were attributed to amorphous carbon formed on the surface of graphene by carbonization of environmental hydrocarbons. While the carbonaceous layers were formed for a wide range of annealing temperature and time, they could be effectively removed by prolonged annealing in vacuum. This study underlines that spectral features of graphene and presumably other 2-dimensional materials are highly vulnerable to interference by foreign materials of molecular thickness.
URI
https://oasis.postech.ac.kr/handle/2014.oak/12884
DOI
10.1038/SREP02700
ISSN
2045-2322
Article Type
Article
Citation
SCIENTIFIC REPORTS, vol. 3, page. 2700, 2013-09-19
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류순민RYU, SUNMIN
Dept of Chemistry
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