Solution-processed, high-performance n-channel organic microwire transistors
SCIE
SCOPUS
- Title
- Solution-processed, high-performance n-channel organic microwire transistors
- Authors
- Oh, JH; Hang Woo Lee; Stefan Mannsfeld; Randall M. Stoltenberg; Eric Jung; Yong Wan Jin; Jong Min Kim; Ji-Beom Yoo; Zhenan Bao
- Date Issued
- 2009-04-14
- Publisher
- National Academy of Sciences
- Abstract
- The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (mu) up to 0.24 cm(2)/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (mu as high as 1.4 cm(2)/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12748
- DOI
- 10.1073/PNAS.0811923106
- ISSN
- 0027-8424
- Article Type
- Article
- Citation
- PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, vol. 106, no. 15, page. 6065 - 6070, 2009-04-14
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