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Origin of negative thermal expansion in strongly correlatedf-electron systems SCIE SCOPUS

Title
Origin of negative thermal expansion in strongly correlatedf-electron systems
Authors
Kim, JunwonKang, J. -S.Kang, Chang-JongMin, B. I.
Date Issued
2023-03
Publisher
AMER PHYSICAL SOC
Abstract
We have investigated the origin of the negative-thermal-expansion (NTE) phenomena observed in various strongly correlated f-electron systems, including Ce, Sm, and Yb rare-earth compounds and actinide element Pu. We have thoroughly surveyed existing nonmagnetic f-electron NTE materials and identified that the temperature (T)-induced valence transition plays an essential role in realizing the NTE in Sm-and Yb-based mixed-valence (MV) systems. We have discussed the contrasting thermal-expansion behaviors between (Sm, Yb)-based MV systems and their electron-hole symmetric counterparts (Ce, Eu)-based MV systems that exhibit positive-thermal-expansion (PTE) phenomena. We have also clarified the origin of intriguing thermal expansion behavior of Pu, which, upon cooling, reveals not only the NTE, but also the strong PTE. Fi-nally, we have predicted the possible existence of an additional NTE feature in topological-Kondo-insulator (TKI) candidates of SmB6, g-SmS, and YbB12 in the low-T regime where the TKI nature is expected to emerge.
URI
https://oasis.postech.ac.kr/handle/2014.oak/123709
DOI
10.1103/PhysRevB.107.115157
ISSN
2469-9950
Article Type
Article
Citation
PHYSICAL REVIEW B, vol. 107, no. 11, 2023-03
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