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Substrate Biasing Approach to Generate Artificial Oxygen Vacancy for Stable Nitrogen-Doped IGZO Thin-Film Transistor

Title
Substrate Biasing Approach to Generate Artificial Oxygen Vacancy for Stable Nitrogen-Doped IGZO Thin-Film Transistor
Authors
CHUNG, YOONYOUNG김주은박성민JEON, GILSUSUWON, SEONG
Date Issued
2021-08-26
Publisher
IMID
URI
https://oasis.postech.ac.kr/handle/2014.oak/123243
Article Type
Conference
Citation
International Meeting on Information Display (IMID), 2021-08-26
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정윤영CHUNG, YOONYOUNG
Dept of Electrical Enginrg
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