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Honeycomb network of indium trimers and monomers on Si(111)-(2x2) SCIE SCOPUS

Title
Honeycomb network of indium trimers and monomers on Si(111)-(2x2)
Authors
Kwon, SGKang, MH
Date Issued
2014-04-10
Publisher
AMER PHYSICAL SOC
Abstract
Density functional calculations predict that the In/Si(111)-(2x2) surface, a key intermediate phase leading to the complex In phase development on Si(111), consists of an intriguing one-atom-thick In overlayer. In atoms of 1 monolayer (ML) (referred to as one In atom per surface Si) there forms a quasihoneycomb network of two In units, a monomer and a triangular trimer, which well accounts for the measured microscopy images and In 4d core-level shifts. This In single layer is, however, semiconducting with a band gap of 0.47 eV and thus could not represent the long-sought two-dimensional (2D) limit of metallic In overlayers. But its In coverage of 1 ML sets a definite lower bound on the coverage for such a 2D-metallic one-atom-thick In overlayer.
Keywords
AUGMENTED-WAVE METHOD; ONE-ATOMIC-LAYER; STRUCTURAL TRANSFORMATIONS; SURFACE-STATES; RECONSTRUCTION; ADSORPTION; FILMS; STM
URI
https://oasis.postech.ac.kr/handle/2014.oak/12318
DOI
10.1103/PHYSREVB.89.165304
ISSN
1098-0121
Article Type
Article
Citation
PHYSICAL REVIEW B, vol. 89, no. 16, 2014-04-10
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