Out-of-plane magnetoresistance in ferromagnet/graphene/ferromagnet spin-valve junctions
SCIE
SCOPUS
- Title
- Out-of-plane magnetoresistance in ferromagnet/graphene/ferromagnet spin-valve junctions
- Authors
- Park, JH; Lee, HJ
- Date Issued
- 2014-04-21
- Publisher
- AMER PHYSICAL SOC
- Abstract
- Out-of-plane spin-injection and detection through naturally stacked graphene layers were investigated in ferromagnet/graphene/ferromagnet (FGF) junctions. We obtained a maximum magnetoresistance (MR) of 4.6% at T=4.2 K in the junction of a four-layer graphene insertion, having a very small area-junction- resistance product of 0.2 Omega mu m(2). According to resistance-temperature and current-voltage characteristics, the graphene layer in the FGF junction acted as a metal-like insertion rather than as an insulating barrier. A lower value for the interfacial spin asymmetry coefficient (gamma=0.25 +/- 0.05) obtained from the fitting of variations with interfacial resistance implies that the spin-injection efficiency along the out-of-plane direction was reduced by spin-flip scattering at graphene/ferromagnet interfaces. Our results showed that highly transparent graphene/ferromagnet interfaces with crystalline ferromagnet (FM) electrodes are required to achieve higher spin-injection efficiency through the graphene layer in a FGF junction along the out-of-plane direction.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12315
- DOI
- 10.1103/PHYSREVB.89.165417
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 89, no. 16, 2014-04-21
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