Reversible oxidative p-doping in 2D tin halide perovskite field-effect transistors
SCIE
SCOPUS
- Title
- Reversible oxidative p-doping in 2D tin halide perovskite field-effect transistors
- Authors
- Yeeun Kim; Jaeyong Woo; Young-Kwang Jung; Heebeom Ahn; Inha Kim; YOUJIN, REO; Hyungbin Lim; Changjun Lee; Jonghoon Lee; Yongjin Kim; Hyeonmin Choi; Min-Hyun Lee,; Jeongjae Lee; Samuel D Stranks; Henning Sirringhaus; NOH, YONG YOUNG; Keehoon Kang; Takhee Lee
- Date Issued
- 2024-04
- Publisher
- American Chemical Society
- Abstract
- Tin (Sn) halide perovskites are promising materials for various electronic applications due to their favorable properties. However, facile interaction with atmospheric oxygen (O-2) often hinders the practical use of Sn-based perovskites, which is regarded as a major cause of undesired variations in their electrical and structural properties. Herein, we report the reversible p-doping in phenethylammonium tin iodide ((PEA)(2)SnI4) transistors when they are exposed sequentially to ambient and vacuum conditions. Exposure to ambient conditions induces p-doping effects that lead to a significant shift in the threshold voltage. Interestingly, we have found that the unintentionally p-doped (PEA)(2)SnI4 transistors can be fully restored by simply exposing them to vacuum, indicating a complete dedoping without any structural or operational degradation. Our first-principles calculations further support the observations by revealing that the doping by O-2 molecules occurs via occupying the interstitial sites that form acceptor levels close to the valence band maximum of (PEA)(2)SnI4.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/123096
- DOI
- 10.1021/acsenergylett.4c00497
- ISSN
- 2380-8195
- Article Type
- Article
- Citation
- ACS Energy Letters, vol. 9, no. 4, page. 1725 - 1734, 2024-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.