Metal - insulator transition on the Si(111)4 X 1-In surface with oxygen impurity
SCIE
SCOPUS
- Title
- Metal - insulator transition on the Si(111)4 X 1-In surface with oxygen impurity
- Authors
- Uhm, SH; Yeom, HW
- Date Issued
- 2013-10-21
- Publisher
- American Physical Society
- Abstract
- We investigate with low-energy-electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES) the effect of oxygen adsorbates on the phase transition of the Si(111)4 x 1-In surface. On this surface, oxygen was reported to increase the transition temperature (T-c) into the distorted 8 x 2 phase. We observed that while the T-c into the 8 x 2 phase increases up to 180 K, the substantial disorder is also induced on the surface. ARPES study reveals that the oxygen-induced 8 x 2 phase has the same insulating band structure with that on the pristine surface at a lower temperature. This indicates clearly that the oxygen-induced 4 x 1-8 x 2 transition is a consistent metal-insulator transition with that on the pristine surface. On the other hand, oxygen adsorbates slightly increase the band filling of the one-dimensional metallic bands of the 4 x 1-In surface. This contrasts with the expectation of the hole doping and the increased T-c, thus cannot be explained by the doping effect of adsorbates. A further study of the oxygen-induced 8 x 2 phase is requested to understand the microscopic mechanism of the adsorbate-induced elevation of the metal-insulator T-c.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12296
- DOI
- 10.1103/PHYSREVB.88.165419
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 88, no. 16, 2013-10-21
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.