Electronic structure and magnetic properties of hole-carrier-doped La2MnNiO6:La2-xSrxMnNiO6
SCIE
SCOPUS
- Title
- Electronic structure and magnetic properties of hole-carrier-doped La2MnNiO6:La2-xSrxMnNiO6
- Authors
- Kim, B; Choi, HC; Kim, BH; Min, BI
- Date Issued
- 2010-06-01
- Publisher
- AMER PHYSICAL SOC
- Abstract
- We have investigated hole-carrier-doping effects in a ferromagnetic insulator La2MnNiO6. Employing the ab initio band-structure method, we have examined the changes in the electronic structures and the valence states of Sr-doped La2-xSrxMnNiO6 with varying Sr doping ratio. On Sr doping, we have found a transition from a ferromagnetic insulating phase to a half-metallic phase. The half-metallic nature in La2-xSrxMnNiO6 is found to be robust with respect to the on-site Coulomb correlation of transition metal 3d electrons and the antisite disorder at B sites. We have corroborated that the substantially weak x-ray magnetic circular dichroism signal observed for La2-xSrxMnNiO6, as compared to the undoped system, is caused by antisite disorder at B sites in a Sr-doped system.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12237
- DOI
- 10.1103/PHYSREVB.81.224402
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 81, no. 22, 2010-06-01
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