Electronic structure and volume effect on thermoelectric transport in p-type Bi and Sb tellurides
SCIE
SCOPUS
- Title
- Electronic structure and volume effect on thermoelectric transport in p-type Bi and Sb tellurides
- Authors
- Park, MS; Song, JH; Medvedeva, JE; Kim, M; Kim, IG; Freeman, AJ
- Date Issued
- 2010-04-15
- Publisher
- AMER PHYSICAL SOC
- Abstract
- Thermoelectric transport properties (Seebeck coefficient, S, and electrical conductivity, sigma) of p-type Bi and Sb tellurides are investigated using a first-principles all-electron density-functional approach. We demonstrate that the carrier concentration, band gap, and lattice constants have an important influence on the temperature behavior of S and that the volume expansion by 5.5% in Sb(2)Te(3) results in an increase in S by 33 mu V/K at 300 K. We argue that in addition to the electronic structure characteristics, the volume also affects the value of S and hence should be considered as an origin of the experimental observations that S can be enhanced by doping Sb(2)Te(3) with Bi (which has a larger ionic size) in Sb sites or by the deposition of thick Bi(2)Te(3) layers alternating with thinner Sb(2)Te(3) layers in a superlattice, Bi(2)Te(3)/Sb(2)Te(3). We show that the optimal carrier concentration for the best power factor of Bi(2)Te(3) and Sb(2)Te(3) is approximately 10(19) cm(-3).
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12232
- DOI
- 10.1103/PHYSREVB.81.155211
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 81, no. 15, 2010-04-15
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.