Structural and electronic properties of thallium overlayers on the Si(111)-7x7 surface
SCIE
SCOPUS
- Title
- Structural and electronic properties of thallium overlayers on the Si(111)-7x7 surface
- Authors
- Lee, SS; Song, HJ; Kim, ND; Chung, JW; Kong, K; Ahn, D; Yi, H; Yu, BD; Tochihara, H
- Date Issued
- 2002-12-15
- Publisher
- AMERICAN PHYSICAL SOC
- Abstract
- We have investigated atomic arrangements and their electronic properties of the well-ordered thallium overlayer structures formed on the Si(111)-7x7 surface. As for other trivalent atoms, Tl is found to form a well-defined root3xroot3 surface, indicating the absence of a so-called "inert pair effect" considered only for Tl. Another well ordered 1x1 surface at 1.0 monolayer appears to be semiconducting in our angle-resolved photoemission spectra dominated by a unique dispersive surface band near the Fermi level. Our theoretical calculations using density-functional theory show that Tl adatoms occupy the T-4 sites and saturate all the dangling bonds of surface Si atoms to make the surface semiconducting with a band gap of 0.34 eV. The filled surface band observed has been well reproduced in our band calculations.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12082
- DOI
- 10.1103/PhysRevB.66.233312
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 66, no. 23, 2002-12-15
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