All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric
SCIE
SCOPUS
- Title
- All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric
- Authors
- Joung Su-Yeon; Yim Haena; Lee Donghun; Shim Jaehyung; Yoo So Yeon; Kim Yeon Ho; Kim Jin Seok; Kim Hyunjun; Hyeong Seok-Ki; Kim Junhee; Noh Yong-Young; Bae Sukang; Park Myung Jin; Choi Ji-Won; Lee Chul-Ho
- Date Issued
- 2024-01
- Publisher
- American Chemical Society
- Abstract
- Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 degrees C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm(2) V-1 s(-1)) and an on/off ratio exceeding 10(6). Additionally, the use of a high-k dielectric allows for operation at low voltage (similar to 5 V) and leakage current (similar to 10(-11) A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/120466
- DOI
- 10.1021/acsnano.3c06972
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS Nano, vol. 18, no. 3, page. 1958 - 1968, 2024-01
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- There are no files associated with this item.
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