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IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction SCIE SCOPUS

Title
IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450–950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction
Authors
KO, HyungminYANG, SEOKJOOJEUNG, JINPYEOPark, HyukSEO TAEWONKim, Seung‐MoLee, Byoung HunCho, KilwonChung, Yoonyoung
Date Issued
2024-02
Publisher
John Wiley and Sons Inc.
Abstract
Among various photoresponsive materials, organic materials have gained interest due to their low cost, large-scale yields, and compatibility with flexible substrates. However, their low photoresponsivity compared to inorganic counterparts has been consistently pointed out as a limitation. To address this issue, a highly photoresponsive PM6:Y6/IGZO hybrid phototransistor is presented with a broad spectral range of 450–950 nm. The photoresponse of the device is enhanced by controlling the PM6:Y6 blending ratio, active layer thickness, and solvent additive treatment. The PM6:Y6 blending ratio and thickness are optimized to promote charge separation and efficient charge transport, leading to a significant increase in photoresponsivity. Moreover, solvent additives are employed to improve the crystallinity of the PM6:Y6 film, which further enhanced the charge transport. As a result, the PM6:Y6/IGZO hybrid phototransistor exhibited exceptional performance, with an ultrahigh photoresponsivity of 2.2 × 108 A W−1 and specific detectivity of 9.8 × 1016 Jones under 750 nm light with an intensity of only 1.03 nW cm−2. These results highlight the potential of organic materials in developing high-performance phototransistors. © 2024 Wiley-VCH GmbH.
URI
https://oasis.postech.ac.kr/handle/2014.oak/120455
DOI
10.1002/adom.202303152
ISSN
2195-1071
Article Type
Article
Citation
Advanced Optical Materials, 2024-02
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정윤영CHUNG, YOONYOUNG
Dept of Electrical Enginrg
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