Effects of doping and magnetic field on the half-metallic electronic structures of La1-xBaxMnO3
SCIE
SCOPUS
- Title
- Effects of doping and magnetic field on the half-metallic electronic structures of La1-xBaxMnO3
- Authors
- Youn, SJ; Min, BI
- Date Issued
- 1997-11-15
- Publisher
- AMERICAN PHYSICAL SOC
- Abstract
- To deduce systematic trends in electronic and magnetic properties of colossal magnetoresistance (CMR) manganese oxides, we have investigated electronic structures of La1-xBaxMnO3 with varying doping concentration. Assuming a virtual solid of LbMnO(3), where Lb stands for a virtual atom with a fractional atomic number between La and Ba, we have studied effects of the doping and the magnetic field on the electronic structures of La1-xBaxMnO3. It is found that the La1-xBaxMnO3 system is half metallic in the doping range of x>0.33, and that it becomes half metallic even for x<0.33 by applying the magnetic field. The half-metallic property in the presence of the magnetic field is discussed in relation to the observed CMR effect in doped LaMnO3 systems.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12012
- DOI
- 10.1103/PhysRevB.56.12046
- ISSN
- 0163-1829
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 56, no. 19, page. 12046 - 12049, 1997-11-15
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