INTERACTION OF LOW-ENERGY OXYGEN IONS WITH THE SI(100) SURFACE
SCIE
SCOPUS
- Title
- INTERACTION OF LOW-ENERGY OXYGEN IONS WITH THE SI(100) SURFACE
- Authors
- Chung, J. W.; Baek, D. H.; Kim, B. O.; Yeom, H. W.; Kim, C. Y.; Jeong, J. I.; Shin, H. J.
- Date Issued
- 1992-01-15
- Publisher
- AMERICAN PHYSICAL SOC
- Abstract
- The local atomic-bond structures in amorphous SiO2 films prepared by a nonthermal method have been investigated by electron-energy-loss spectroscopy (EELS). The method utilizes oxygen ions of energy below 600 eV impinging on Si(100) surfaces at room temperature. The results, based on an augmented-central-force model, reveal that the Si-O bond nature in the films strongly resembles a typical thermal SiO2 glass. The contribution of noncentral forces to the local Si-O bonding, in terms of the ratio of noncentral-to-central force constants beta/alpha, is estimated by reducing the low-frequency EELS vibrational band (HBAR less-than-or-equal-to 80 meV). The ratio is found to be rather temperature insensitive but increases with film thickness, in the range 0.13 < beta/alpha < 0.19. We also observe thermally activated migration of oxygen atoms in the films with an activation energy barrier of about 0.22 eV.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11967
- DOI
- 10.1103/PhysRevB.45.1705
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 45, no. 4, page. 1705 - 1711, 1992-01-15
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