OXYGEN DIFFUSION IN EPITAXIAL YBA2CU3O7-X THIN-FILMS
SCIE
SCOPUS
- Title
- OXYGEN DIFFUSION IN EPITAXIAL YBA2CU3O7-X THIN-FILMS
- Authors
- BAE, SC; KU, JK; LEE, SH; SHIN, HJ
- Date Issued
- 1992-10-01
- Publisher
- AMERICAN PHYSICAL SOC
- Abstract
- In situ resistance changes of YBa2Cu3O7-x thin films during deposition were investigated at four different substrate temperatures in the 560-700-degrees-C range. The shapes of the resistance curves with time and the measurement of deposition rates clearly indicated that the film grew epitaxially on the (100)SrTiO3 substrate at 700-degrees-C. Isothermal oxygen diffusion along the c-axis direction into the epitaxially grown YBa2Cu3O7-x thin films was investigated by monitoring in situ resistance changes in the 450-600-degrees-C range; the apparent diffusion coefficients were (3.1-6.3) x 10(-11) cm2/s. An Arrhenius plot of the diffusion coefficients in the 450-550-degrees-C range gave an activation energy of 0.33 eV for oxygen diffusion plus a tetragonal-orthorhombic phase transition.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11964
- DOI
- 10.1103/PhysRevB.46.9142
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 46, no. 14, page. 9142 - 9146, 1992-10-01
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.