A 20.5-nW Resistor-Less Bandgap Voltage Reference With Self-Biased Compensation for Process Variations
SCIE
SCOPUS
- Title
- A 20.5-nW Resistor-Less Bandgap Voltage Reference With Self-Biased Compensation for Process Variations
- Authors
- Ji, Youngwoo; Sim, Jae-Yoon
- Date Issued
- 2022-01
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- IEEEThis brief proposes a resistor-less bandgap reference (BGR) based on a leakage-based proportional-to-absolute-temperature (PTAT) scheme. The effect of process variations on the current is mitigated by employing self-biased current-limiting MOS transistors. The bias voltages needed for approximating a large resistance can be obtained from a single branch by placing threshold-sampling transistors on top of the BGR output. The fabricated BGR in 0.18-μm CMOS occupies an active area of 0.035 mm² and consumes 20.5 nW, and it shows a standard deviation of 0.68% at untrimmed reference voltages.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/117874
- DOI
- 10.1109/TVLSI.2022.3158729
- ISSN
- 1063-8210
- Article Type
- Article
- Citation
- IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 30, no. 6, page. 840 - 843, 2022-01
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