single-event upset in 3-D charge-trap NAND flash memories
SCIE
SCOPUS
- Title
- single-event upset in 3-D charge-trap NAND flash memories
- Authors
- PARK, JOUNGHUN; HAN, JIN-WOO; YOON, GILSANG; GO, DONGHYUN; KIM, DONGHWI; KIM, JUNGSIK; LEE, JEONG SOO
- Date Issued
- 2022-11
- Publisher
- Institute of Electrical and Electronics Engineers
- Abstract
- The effects of single-event upset (SEU) on the threshold voltage ( VT ) of a programmed cell in 3-D charge-trap (CT) NAND flash memory have been investigated using 3-D technology-computer-aided design (TCAD) simulations. After ion strikes, the surrounding electric field ( E -field) accelerates the generated holes into the CT layer (CTL), which lowers VT of the programmed cell. The tunneling oxide (TOX) strike causes a more severe VT shift than the blocking oxide (BOX) strike due to the higher E -field in the TOX layer. As the strike angle increases from 0° (lateral) to 90° (vertical), the effective irradiation volume is reduced, resulting in the mitigation of the SEU influence. Scaling of cell dimensions becomes more vulnerable to SEU except for the thinner TOX.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/114629
- DOI
- 10.1109/TED.2022.3207113
- ISSN
- 0018-9383
- Article Type
- Article
- Citation
- IEEE Transactions on Electron Devices, vol. 69, no. 11, page. 6089 - 6094, 2022-11
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.