MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films
SCIE
SCOPUS
- Title
- MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films
- Authors
- Yoo, Joung Eun; Sung, Ju Young; Ha Hwang, Jin; Maeng, Inhee; Oh, Seung-Jae; Lee, Inho; Shim, Ji Hoon; Kim, Sung Dug; Yoon, Du-Seop; Jang, Seo Young; Kang, Young Jae; Lee, Sang Woon
- Date Issued
- 2021-12
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Metal thin films have been widely used as conductors in semiconductor devices for several decades. However, the resistivity of metal thin films such as Cu and TiN increases substantially (>1000%) as they become thinner (<10 nm) when using high-density integration to improve device performance. In this study, the resistivities of MAX-phase V2AlC films grown on sapphire substrates exhibited a significantly weaker dependence on the film thickness than conventional metal films that resulted in a resistivity increase of only 30%, as the V2AlC film thickness decreased from approximately 45 to 5 nm. The resistivity was almost identical for film thicknesses of 10-50 nm. The small change in the resistivity of V2AlC films with decreasing film thickness originated from the highly ordered crystalline quality and a small electron mean free path (11-13.6 nm). Thus, MAX-phase thin films have great potential for advanced metal technology applications to overcome the current scaling limitations of semiconductor devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/113099
- DOI
- 10.1021/acsami.1c20516
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS APPLIED MATERIALS & INTERFACES, vol. 13, no. 51, page. 61809 - 61817, 2021-12
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