Substrate-Dependent Growth Mode Control of MoS2 Monolayers: Implications for Hydrogen Evolution and Field-Effect Transistor
SCIE
SCOPUS
- Title
- Substrate-Dependent Growth Mode Control of MoS2 Monolayers: Implications for Hydrogen Evolution and Field-Effect Transistor
- Authors
- CHOI, MIN YEONG; CHOI, CHANGWON; YANG, SEONG JUN; LEE, HOJEONG; CHOI, SIN YOUNG; PARK, JUNHO; HEO, JONG; CHOI, SI YOUNG; KIM, CHEOL JOO
- Date Issued
- 2022-03
- Publisher
- American Chemical Society
- Abstract
- The control of domain sizes provides a powerful means to engineer the characteristics of monolayer (ML) MoS2films for specific applications including catalysts for hydrogen evolution and thin-film transistors. Here, we report an efficient way to control domain structures of MoS2by substrate-dependent growth mode control. Deterministic control of growth modes, associated with catalytic intermediates, is introduced by utilizing different growth substrates in metal-organic chemical vapor deposition (MOCVD) of ML MoS2. Na-Mo-O eutectic alloys formed by a soda lime (SL) substrate dominate the growth based on a vapor-liquid-solid (VLS) process, resulting in large-crystalline domains of MoS2with a reduced density of liquid nuclei. On the other hand, MoO3-xseeds formed from an alkali aluminosilicate (AA) substrate accelerate nucleation via a vapor-solid-solid (VSS) process for nanocrystalline domains. ML MoS2of nanocrystalline domains resulted in efficient hydrogen evolution reactions (HERs), while large-domain films showed better electron conductivity. © 2022 American Chemical Society. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/112787
- DOI
- 10.1021/acsanm.2c00369
- ISSN
- 2574-0970
- Article Type
- Article
- Citation
- ACS Applied Nano Materials, vol. 5, no. 3, page. 4336 - 4342, 2022-03
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