Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method
SCIE
SCOPUS
- Title
- Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method
- Authors
- Ryu, Y; Yong, KJ
- Date Issued
- 2005-09
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- A large quantity of highly uniform SiC nanowires was directly synthesized from Si substrates using a thermal heating method. The atomic structure, morphology, and composition of the SiC nanowires were strongly dependent on the ambient gases (Ar,N-2) used during nanowire- growth. The nanowires grown in Ar were coated with amorphous carbon layers while the nanowires grown in N-2 had no coating layers. Also, nitrogen and oxygen were incorporated only into SiC nanowires grown in N-2. A proposed model for the role of ambient gases in the SiC nanowire growth is discussed. (c) 2005 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11277
- DOI
- 10.1116/1.2050667
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 5, page. 2069 - 2072, 2005-09
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