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High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact
- Title
- High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact
- POSTECH Authors
- Lee, JL
- Date Issued
- Jan-2004
- Publisher
- A V S AMER INST PHYSICS
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 4, page. 1851 - 1857, 2004-01
- Files in This Item:
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg