Open Access System for Information Sharing

Login Library

 

Article
Cited 8 time in webofscience Cited 9 time in scopus
Metadata Downloads

High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact

Title
High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact
Authors
Kim, SYJang, HWLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2004
Publisher
A V S AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/11270
DOI
10.1116/1.1761435
ISSN
1071-1023
Article Type
Article
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 4, page. 1851 - 1857, 2004-01
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

이종람LEE, JONG LAM
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse