Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni
SCIE
SCOPUS
- Title
- Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni
- Authors
- Kim, GB; Yoo, DJ; Baik, HK; Myoung, JM; Lee, SM; Oh, SH; Park, CG
- Date Issued
- 2003-01
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- The effect of reactive deposition of Ni on the thermal stability of Ni silicide has been investigated in this study. In the case of room-temperature-deposited Ni, the agglomeration of Ni silicide, which induced the thermal instability during subsequent annealing, started to appear at 600 degreesC and the sheet resistance was increased abruptly after high-temperature anneals. However, when the Ni was deposited on the heated Si substrate (reactive deposition of Ni), the sheet resistance of Ni silicide film exhibited a constant value of about 7.91 Omega/rectangle at the whole reaction temperature, especially at 900 degreesC. (C) 2003 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11266
- DOI
- 10.1116/1.1539064
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 21, no. 1, page. 319 - 322, 2003-01
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