Direct epitaxial growth of submicron-patterned SiC structures on Si(001)
SCIE
SCOPUS
- Title
- Direct epitaxial growth of submicron-patterned SiC structures on Si(001)
- Authors
- Yi, GC; Eres, G; Lowndes, DH
- Date Issued
- 1999-11
- Publisher
- AMER INST PHYSICS
- Abstract
- We report on the direct epitaxial growth of submicron-patterned SiC structures on Si(001) substrates using supersonic molecular jet epitaxy and resistless e-beam lithography. Prior to SiC film growth, an electron beam was scanned on hydrogen-passivated Si substrates in order to produce silicon oxide lines with widths greater than or equal to 60 nm. The SiC nucleation and growth rates were significantly reduced on the oxidized regions during the subsequent supersonic jet epitaxial growth of SiC, which yielded epitaxial, submicron-patterned SiC films. The, effects of the growth temperature and e-beam dose on the SiC growth and pattern linewidth are discussed. (C) 1999 American Vacuum Society. [S0734-211X(99)00906-3].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11249
- DOI
- 10.1116/1.591029
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 6, page. 2600 - 2602, 1999-11
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