Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)
SCIE
SCOPUS
- Title
- Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100)
- Authors
- Lee, NY; Yong, KJ; Jeong, HS; Kim, CM
- Date Issued
- 2005-07
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- Adsorption and reactions of tetrabutoxysilane (Si(OC4H9)(4)) on a Si(100) surface were investigated using temperature programmed desorption and x-ray photoelectron spectroscopy. Physisorbed tetrabutoxysilane undergoes C-O bond scission to form -O-Si(OC4H9)(3) and butyl species on Si(100) at 200 K. It is observed that further C-O bond scission takes place sequentially in the temperature range of 200-500 K. Main desorption products are butene and hydrogen, which are desorbed at 410 K and 820 K, respectively. We propose that the production of butene takes place through beta-hydride elimination of the butyl group on Si(100). (c) 2005 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11229
- DOI
- 10.1116/1.1927106
- ISSN
- 0734-2101
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, vol. 23, no. 4, page. 613 - 616, 2005-07
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