Effect of Cu, CuO, and Cu-CuO Bilayer Source/Drain Electrodes on the Performance of the Pentacene Thin-Film Transistor
SCIE
SCOPUS
- Title
- Effect of Cu, CuO, and Cu-CuO Bilayer Source/Drain Electrodes on the Performance of the Pentacene Thin-Film Transistor
- Authors
- Yun, DJ; Lim, SH; Cho, SH; Kim, BS; Rhee, SW
- Date Issued
- 2009-06
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- Cu, CuO, and Cu-CuO bilayer films were deposited with radio-frequency sputtering by controlling the O(2)/Ar gas flow ratio and the performance of the pentacene thin-film transistor (TFT) with these films as a source/drain (S/D) electrode was measured. With an O(2)/Ar gas flow ratio higher than 1, CuO film was obtained with a resistivity of similar to 10(5) mu cm and a work function of similar to 5.0 eV close to the highest occupied molecular orbital energy level of pentacene. Pentacene TFT with CuO film deposited at (Ar:O(2)=0:50 sccm) showed better performance than Cu film because the barrier height between the electrode and the semiconductor layer was smaller. The pentacene TFTs with CuO/Cu and Cu/CuO bilayer S/D electrodes were fabricated through the shadow mask patterning, and the CuO/Cu structure showed better performance than Cu or Cu/CuO because hole injection was through the CuO layer. It was confirmed that the edge effect with a shadow mask had an influence on the electrode pattern formation due to the infiltration of the film-forming species through the microgap.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11174
- DOI
- 10.1149/1.3147264
- ISSN
- 0013-4651
- Article Type
- Article
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. H634 - H639, 2009-06
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