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An investigation on grain-boundary trap properties using staircase charge-pumping technique in polysilicon thin-film transistors
- Title
- An investigation on grain-boundary trap properties using staircase charge-pumping technique in polysilicon thin-film transistors
- POSTECH Authors
- Kim, O
- Date Issued
- Jan-1997
- Publisher
- ELECTROCHEMICAL SOC INC
- ISSN
- 0013-4651
- Article Type
- Article
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 144, no. 7, page. 2501 - 2504, 1997-01
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Related Researcher
- 김오현KIM, OHYUN
- Dept of Electrical Enginrg