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An investigation on grain-boundary trap properties using staircase charge-pumping technique in polysilicon thin-film transistors

Title
An investigation on grain-boundary trap properties using staircase charge-pumping technique in polysilicon thin-film transistors
Authors
Kim, KJKim, O
POSTECH Authors
Kim, O
Date Issued
Jan-1997
Publisher
ELECTROCHEMICAL SOC INC
URI
http://oasis.postech.ac.kr/handle/2014.oak/11083
ISSN
0013-4651
Article Type
Article
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 144, no. 7, page. 2501 - 2504, 1997-01
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김오현KIM, OHYUN
Dept of Electrical Enginrg
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