Measurement of critical dimension in scanning electron microscope mask images
SCIE
SCOPUS
- Title
- Measurement of critical dimension in scanning electron microscope mask images
- Authors
- Lee, W; Han, SH; Jeong, H
- Date Issued
- 2011-04
- Publisher
- SPIE-SOC PHOTOPTICAL INSTRUMENTATION ENGINEERS
- Abstract
- In semiconductor industries, controlling and measuring critical dimensions are two important tools to design masks. However, measuring the dimensions with physical tools becomes more challenging, and the traditional method of measuring is slow and has many processes though it is accurate. This paper suggests a method that accurately measures the critical dimension length in a short time based on the digital image processing. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI:10.1117/1.3574771]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11011
- DOI
- 10.1117/1.3574771
- ISSN
- 1932-5150
- Article Type
- Article
- Citation
- JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, vol. 10, no. 2, 2011-04
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- There are no files associated with this item.
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