Organic phototransistors based on solution grown, ordered single crystalline arrays of a pi-conjugated molecule
SCIE
SCOPUS
- Title
- Organic phototransistors based on solution grown, ordered single crystalline arrays of a pi-conjugated molecule
- Authors
- Biswanath Mukherjee; Kyoseung Sim; Tae Joo Shin; Junghyun Lee; Moumita Mukherjee; Ree, M; Seungmoon Pyo
- Date Issued
- 2012-02
- Publisher
- Royal Society of Chemistry
- Abstract
- High quality, single crystalline, ordered arrays of a pi-conjugated organic molecule, N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C-8), were grown by solution processing and used to fabricate a low-cost, high-performance organic phototransistor (OPT). The single crystalline nature of the microstructure was investigated using 2D-GIXD measurement. The organic field-effect transistor fabricated using periodic arrays of elongated crystals exhibited a photoresponsivity (P) of ca. 1 A W-1 and a photo to dark current ratio (I-on/I-off) of 2.5 x 10(3) at V-G = 12 V and a maximum P of ca. 7 A W-1 at the high gate bias regime (V-G = 50 V) with an optical power of ca. 7.5 mW cm(-2). With polymeric gate dielectric, the OPT exhibited very stable n-type characteristics both in the dark and under light illumination and showed reproducible photo-switching behavior. The dependence of the photocurrent on the gate/drain voltage and on illumination intensity provided an effective way to control the number of photo-carriers generated in the active material, enabling the precise tuning of the device's performance. Performance comparison between OPTs with ordered crystal arrays and thin films of PTCDI-C-8 confirmed that the material's intrinsic properties were better realized in the crystalline device, presumably because of higher charge carrier mobility and better charge transport capability. This one-step, solution-based, self-assembly fabrication of multifunctional (photodetection, photoswitching, signal amplification) optoelectronic devices has potential to aid the development of organic semiconductors with high-quality micro/nanostructures for large-scale application and low-cost optoelectronic devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10965
- DOI
- 10.1039/C2JM14179E
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 22, no. 7, page. 3192 - 3200, 2012-02
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