Direct Pattern Transfer Using an Inorganic Polymer-derived Silicate Etch Mask
SCIE
SCOPUS
- Title
- Direct Pattern Transfer Using an Inorganic Polymer-derived Silicate Etch Mask
- Authors
- Fang, QL; Li, XD; Tuan, AP; Perumal, J; Kim, DP
- Date Issued
- 2011-03
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- Advancements in patterning materials combined with facile fabrication techniques have been critical for the development of the semiconductor industry. In order to develop a new silicate etch mask for direct pattern transfer onto silicon via etching, methacrylated polyvinylsilazane, an inorganic polymer photoresist acting as a patternable silicate precursor, was used to fabricate micron-scale patterns over a large area upon 6 inch silicon wafers by conventional photolithography. The photolithographic patterns obtained were hydrolyzed to convert the polymer phase into the silicate phase after post-heat treatment at 150 degrees C. The silicate patterns were transferred as an etch mask onto silicon wafers via dry plasma etching process using various ratios of an SF6/Cl-2/Ar mixture as etchant. The silicate patterns revealed an excellent etching selectivity of 16 for silicon, which was 8-16 times higher than the polymer phase.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10940
- DOI
- 10.1039/C0JM03869E
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 21, no. 12, page. 4657 - 4662, 2011-03
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