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Defect-engineered graphene chemical sensors with ultrahigh sensitivity SCIE SCOPUS

Title
Defect-engineered graphene chemical sensors with ultrahigh sensitivity
Authors
Lee, GeonyeopYang, GwangseokCho, AraHAN, JEONG WOOKim, Jihyun
Date Issued
2016-06-07
Publisher
Royal Society of Chemistry
Abstract
We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors. We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors.
URI
https://oasis.postech.ac.kr/handle/2014.oak/107576
DOI
10.1039/c5cp04422g
ISSN
1463-9076
Article Type
Article
Citation
Physical Chemistry Chemical Physics, vol. 18, no. 21, page. 14198 - 14204, 2016-06-07
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한정우HAN, JEONG WOO
Dept. of Chemical Enginrg
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