Analysis of 2-terminal Thyristor-based Random Access Memory (T-RAM) Characteristics for Scaling and Data Retention
- Title
- Analysis of 2-terminal Thyristor-based Random Access Memory (T-RAM) Characteristics for Scaling and Data Retention
- Authors
- KIM, HYANGWOO; KONG, BYOUNG DON; MINGEUN, CHOI; CHO, HYEONSU
- Date Issued
- 2020-08-19
- Publisher
- 대한전자공학회
- Abstract
- 2 terminal thyristor random-access memory (T RAM) is investigated in terms of doping concentrations in the storage region to improve scalability and data retention time. When doping concentrations of N and P storage region are equal to each other at 1018 cm-3, T-RAM exhibits the highest retention time of 100 msec. In addition, it is proposed how to set the standby voltage in an energy-effective way. This standby voltage allows steady data retention of T-RAM with femto-scale leakage current until the erase operation is applied. Consequently, the proposed guideline can give a pathway to realize 2 terminal T-RAM as a promising capacitor-less DRAM technology.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/106060
- Article Type
- Conference
- Citation
- 2020 IEIE Summer Conference, 2020-08-19
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- There are no files associated with this item.
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