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Cited 7 time in webofscience Cited 10 time in scopus
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Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle

Title
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
Authors
Jeong, JunseokWang, QingxiaoCha, JanghwanJin, Dae KwonShin, Dong HoonKwon, SunahKang, Bong KyunJang, Jun HyukYang, Woo SeokChoi, Yong SeokYoo, JinkyoungKim, Jong KyuLee, Chul-HoLee, SangwookZakhidov, Anvar A.Hong, SuklyunKim, Moon J.Hong, Young Joon
Date Issued
2020-06
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Abstract
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for deformable device applications. Herein, we demonstrate a method of creating a deformable LED, based on remote heteroepitaxy of GaN microrod (MR) p-n junction arrays on c-Al2O3 wafer across graphene. The use of graphene allows the transfer of MR LED arrays onto a copper plate, and spatially separate MR arrays offer ideal device geometry suitable for deformable LED in various shapes without serious device performance degradation. Moreover, remote heteroepitaxy also allows the wafer to be reused, allowing reproducible production of MR LEDs using a single substrate without noticeable device degradation. The remote heteroepitaxial relation is determined by high-resolution scanning transmission electron microscopy, and the density functional theory simulations clarify how the remote heteroepitaxy is made possible through graphene.
URI
https://oasis.postech.ac.kr/handle/2014.oak/105597
ISSN
2375-2548
Article Type
Article
Citation
SCIENCE ADVANCES, vol. 6, no. 23, 2020-06
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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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