Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
SCIE
SCOPUS
- Title
- Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
- Authors
- Jeong, Junseok; Wang, Qingxiao; Cha, Janghwan; Jin, Dae Kwon; Shin, Dong Hoon; Kwon, Sunah; Kang, Bong Kyun; Jang, Jun Hyuk; Yang, Woo Seok; Choi, Yong Seok; Yoo, Jinkyoung; Kim, Jong Kyu; Lee, Chul-Ho; Lee, Sangwook; Zakhidov, Anvar A.; Hong, Suklyun; Kim, Moon J.; Hong, Young Joon
- Date Issued
- 2020-06
- Publisher
- AMER ASSOC ADVANCEMENT SCIENCE
- Abstract
- There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for deformable device applications. Herein, we demonstrate a method of creating a deformable LED, based on remote heteroepitaxy of GaN microrod (MR) p-n junction arrays on c-Al2O3 wafer across graphene. The use of graphene allows the transfer of MR LED arrays onto a copper plate, and spatially separate MR arrays offer ideal device geometry suitable for deformable LED in various shapes without serious device performance degradation. Moreover, remote heteroepitaxy also allows the wafer to be reused, allowing reproducible production of MR LEDs using a single substrate without noticeable device degradation. The remote heteroepitaxial relation is determined by high-resolution scanning transmission electron microscopy, and the density functional theory simulations clarify how the remote heteroepitaxy is made possible through graphene.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/105597
- DOI
- 10.1126/sciadv.aaz5180
- ISSN
- 2375-2548
- Article Type
- Article
- Citation
- SCIENCE ADVANCES, vol. 6, no. 23, 2020-06
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- There are no files associated with this item.
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