Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
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SCOPUS
- Title
- Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection
- Authors
- TAOYU, ZOU; Ben Xiang; Yangbing X; Ya Wang; Chuan Liu; Jun Chen; Kai Wang; Qing Dai; NOH, YONG YOUNG; Shengdong Zhang; Hang Zhou
- Date Issued
- 2021-01
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metal-oxide-semiconductor CMOS circuit is a key step towards prototyping perovskitebased image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm(-2), and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2 x 10(2)mu C mGy(air)(-1)cm(-3). Theoretically, with a state-of-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as 10 mu Gy(air) s(-1). This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/105411
- DOI
- 10.1109/JEDS.2020.3040771
- ISSN
- 2168-6734
- Article Type
- Article
- Citation
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, vol. 9, page. 96 - 101, 2021-01
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