Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies
SCIE
SCOPUS
- Title
- Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies
- Authors
- Seo, S.-Y.; Moon, G.; ODONGO FRANCIS NGOME OKELLO; Park, M.Y.; Han, C.; Cha, Soonyoung; Choi, Hyunyong; Yeom, H.W.; CHOI, SI YOUNG; Park, Jewook; JO, MOON HO
- Date Issued
- 2021-01
- Publisher
- NATURE RESEARCH
- Abstract
- Few-layer molybdenum ditelluride and tungsten diselenide field-effect transistors can be reversibly doped with different carrier types and concentrations using pulses of ultraviolet and visible light, allowing reconfigurable complementary metal-oxide-semiconductor circuits to be created. Two-dimensional semiconductors have a range of electronic and optical properties that can be used in the development of advanced electronic devices. However, unlike conventional silicon semiconductors, simple doping methods to monolithically assemble n- and p-type channels on a single two-dimensional semiconductor are lacking, which makes the fabrication of integrated circuitry challenging. Here we report the reversible photo-induced doping of few-layer molybdenum ditelluride and tungsten diselenide, where the channel polarity can be reconfigured from n-type to p-type, and vice versa, with laser light at different frequencies. This reconfigurable doping is attributed to selective light-lattice interactions, such as the formation of tellurium self-interstitial defects under ultraviolet illumination and the incorporation of substitutional oxygen in tellurium and molybdenum vacancies under visible illumination. Using this approach, we create a complementary metal-oxide-semiconductor (CMOS) device on a single channel, where the circuit functions can be dynamically reset from a CMOS inverter to a CMOS switch using pulses of different light frequencies.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/105332
- DOI
- 10.1038/s41928-020-00512-6
- ISSN
- 2520-1131
- Article Type
- Article
- Citation
- NATURE ELECTRONICS, vol. 4, no. 1, page. 38 - 44, 2021-01
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