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Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies

Title
Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies
Authors
Seo, S.-Y.Moon, G.ODONGO FRANCIS NGOME OKELLOPark, M.Y.Han, C.Cha, SoonyoungChoi, HyunyongYeom, H.W.CHOI, SI YOUNGPark, JewookJO, MOON HO
Date Issued
2021-01
Publisher
NATURE RESEARCH
Abstract
Few-layer molybdenum ditelluride and tungsten diselenide field-effect transistors can be reversibly doped with different carrier types and concentrations using pulses of ultraviolet and visible light, allowing reconfigurable complementary metal-oxide-semiconductor circuits to be created. Two-dimensional semiconductors have a range of electronic and optical properties that can be used in the development of advanced electronic devices. However, unlike conventional silicon semiconductors, simple doping methods to monolithically assemble n- and p-type channels on a single two-dimensional semiconductor are lacking, which makes the fabrication of integrated circuitry challenging. Here we report the reversible photo-induced doping of few-layer molybdenum ditelluride and tungsten diselenide, where the channel polarity can be reconfigured from n-type to p-type, and vice versa, with laser light at different frequencies. This reconfigurable doping is attributed to selective light-lattice interactions, such as the formation of tellurium self-interstitial defects under ultraviolet illumination and the incorporation of substitutional oxygen in tellurium and molybdenum vacancies under visible illumination. Using this approach, we create a complementary metal-oxide-semiconductor (CMOS) device on a single channel, where the circuit functions can be dynamically reset from a CMOS inverter to a CMOS switch using pulses of different light frequencies.
URI
https://oasis.postech.ac.kr/handle/2014.oak/105332
ISSN
2520-1131
Article Type
Article
Citation
NATURE ELECTRONICS, vol. 4, no. 1, page. 38 - 44, 2021-01
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조문호JO, MOON HO
Dept of Materials Science & Enginrg
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