Microstructures of GaN islands on a stepped sapphire surface
SCIE
SCOPUS
- Title
- Microstructures of GaN islands on a stepped sapphire surface
- Authors
- Kim, CC; Je, JH; Ruterana, P; Degave, F; Nouet, G; Yi, MS; Noh, DY; Hwu, Y
- Date Issued
- 2002-04-01
- Publisher
- AMER INST PHYSICS
- Abstract
- We investigated the structural evolution of GaN nucleation layers in the initial growth stages on commercial c-plane sapphires with atomic steps at the surface, using field-emission scanning electron microscopy, synchrotron x-ray scattering, and high-resolution electron microscopy. GaN nucleates into islands preferentially on the atomic steps. The initial small islands of 25 A high have well-ordered cubic sequences and nearly coherent interfacial structures with a large compressive strain of similar to10%. As the islands grow to 50 A high, the strain is drastically reduced, to less than 1%, by generating misfit dislocations at the interface and forming the six-to-seven matched interfacial structure. Interestingly, stacking faults are developed from the GaN/sapphire interface, which induces a cubic-hexagonal transformation. The changes in the stacking order during the initial growth are investigated quantitatively. (C) 2002 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10518
- DOI
- 10.1063/1.1459607
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 91, no. 7, page. 4233 - 4237, 2002-04-01
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