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Characteristics of ZrO2 gate dielectric deposited using Zr t-butoxide and Zr(NEt2)(4) precursors by plasma enhanced atomic layer deposition method

Title
Characteristics of ZrO2 gate dielectric deposited using Zr t-butoxide and Zr(NEt2)(4) precursors by plasma enhanced atomic layer deposition method
Authors
Kim, YKoo, JHan, JWChoi, SJeon, HPark, CG
POSTECH Authors
Park, CG
Date Issued
Jan-2002
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/10507
DOI
10.1063/1.1513196
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 92, no. 9, page. 5443 - 5447, 2002-01
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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