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Characteristics of ZrO2 gate dielectric deposited using Zr t-butoxide and Zr(NEt2)(4) precursors by plasma enhanced atomic layer deposition method
- Title
- Characteristics of ZrO2 gate dielectric deposited using Zr t-butoxide and Zr(NEt2)(4) precursors by plasma enhanced atomic layer deposition method
- POSTECH Authors
- Park, CG
- Date Issued
- Jan-2002
- Publisher
- AMER INST PHYSICS
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- JOURNAL OF APPLIED PHYSICS, vol. 92, no. 9, page. 5443 - 5447, 2002-01
- Files in This Item:
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg