Low-Temperature Fabrication (≤150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment
SCIE
SCOPUS
- Title
- Low-Temperature Fabrication (≤150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment
- Authors
- Seo; Park; Jeon; Yun; Park; Seong; CHUNG, YOONYOUNG
- Date Issued
- 2020-10-27
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Low-temperature fabrication of thin-film dielectrics is essential for various applications including flexible/stretchable electronics, monolithic three-dimensional integrated circuits, and large-area sensors/displays. Silicon dioxide is one of the most extensively used dielectric materials, but conventional deposition methods such as plasma-enhanced chemical vapor deposition and atomic layer deposition require relatively high temperatures. In this study, a high-quality SiO2 thin film was fabricated at low temperatures below 150 °C using sputtering and hydrogen plasma treatment. The sputtered SiO2 thin film exhibited low leakage current (3 × 10–7 A/cm2 at 3 MV/cm) and a high breakdown field (11.33 MV/cm). After hydrogen plasma treatment was carried out under optimized conditions, the interface trap density between Si and sputtered SiO2 was minimized to 7 × 1011 cm–2 eV–1, which is comparable to the corresponding value for thermally grown SiO2. The results of X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy confirmed that the hydrogen treatment effectively passivates dangling bonds and reduces the portion of oxygen-deficient species.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/104689
- DOI
- 10.1021/acsaelm.0c00631
- ISSN
- 2637-6113
- Article Type
- Article
- Citation
- Acs Applied Electronic Materials, vol. 2, no. 10, page. 3320 - 3326, 2020-10-27
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