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EFFECTS OF STRAIN-ENERGY ON THE PREFERRED ORIENTATION OF TIN THIN-FILMS SCIE SCOPUS

Title
EFFECTS OF STRAIN-ENERGY ON THE PREFERRED ORIENTATION OF TIN THIN-FILMS
Authors
JE, JHOH, UC
Date Issued
1993-08-01
Publisher
AMER INST PHYSICS
Abstract
The effects of strain energy on the preferred orientation of TiN thin films were investigated. In the TiN film deposited by plasma-enhanced chemical-vapor deposition with a power of 50 W, the overall energy of the film mainly depended on the surface energy because its strain energy was relatively small. The preferred orientation of the film corresponded to the plane with the lowest surface energy, i.e., (200). However, in the TiN film deposited by rf sputtering with a power of 200 W, the overall energy of the film was largely controlled by strain energy due to its large strain energy, and its growth orientation corresponded to the plane with the lowest strain energy, i.e., (111). Furthermore, the preferred orientation of the TiN film was changed from (200) to (111) with the film thickness. It is considered that this phenomenon is due to the increase of strain energy with its thickness.
URI
https://oasis.postech.ac.kr/handle/2014.oak/10449
DOI
10.1063/1.355297
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 74, no. 3, page. 1692 - 1696, 1993-08-01
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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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