SI-O BOND STRUCTURE IN SLOW-ION DEPOSITED SIO2-FILMS

Abstract

By impinging a beam of O2+ ions of energy 150 eV < E < 1 keV on a Si (100) surface, we produced oxide films of varying thickness at room temperature. We find that the Si-O bond features of the films are quite similar to those of a thermally prepared vitreous SiO2 glass. We further observe that an intermediate range order in the form of n-member ring clusters with n = 4 and n = 6 exists in the resulting films.