X-ray bright-field imaging analyzes crystalline quality and defects of SiC wafers

Abstract

A new variety of the recently developed technique 'X-ray bright-field imaging' is presented. In its basic version, this approach simultaneously yields diffraction-based information on lattice distortions and radiographic information on structural inhomogeneities, and is based on the detection of reversed diffraction contrast in transmission images. The new version extends the scope of the technique to the quantitative analysis of crystalline quality parameters such as the lattice plane curvature and mosaic distribution in SiC wafers, and makes it possible to correlate such parameters directly with defect (distortions/inhomogeneities) structures.