Structural Color Switching with a Doped Indium-gallium-zinc-oxide Semiconductor
- Structural Color Switching with a Doped Indium-gallium-zinc-oxide Semiconductor
- CHUNG, YOONYOUNG; Kim, Inki; Yun, Juyoung; Badloe, Trevon; Hyuk, Park; Seo, Taewon; Yang, Younghwan; Kim, Juhoon; Rho, Junsuk
- Date Issued
- OPTICAL SOC AMER
- Structural coloration techniques have improved display science due to their high durability in terms of resistance to bleaching and abrasion, and low energy consumption. Here, we propose and demonstrate an all-solid-state, large-area, lithography-free color filter that can switch structural color based on a doped semiconductor. Particularly, an indium-gallium-zinc-oxide (IGZO) thin film is used as a passive index-changing layer. The refractive index of the IGZO layer is tuned by controlling the charge carrier concentration; a hydrogen plasma treatment is used to control the conductivity of the IGZO layer. In this paper, we verify the color modulation using finite difference time domain simulations and experiments. The IGZO-based color filter technology proposed in this study will pave the way for charge-controlled tunable color filters displaying a wide gamut of colors on demand. (C) 2020 Chinese Laser Press
- Article Type
- PHOTONICS RESEARCH, vol. 8, no. 9, page. 1409 - 1415, 2020-09
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