Effect of HAuCl4 Doping on the Contact Properties of Polymer Thin-Film Transistors
SCIE
SCOPUS
- Title
- Effect of HAuCl4 Doping on the Contact Properties of Polymer Thin-Film Transistors
- Authors
- Park, YD; Lim, JA; Kwak, D; Cho, JH; Cho, K
- Date Issued
- 2009-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- We show that the electrical properties of polymer thin-film transistors can be enhanced by doping poly(3-hexylthiophene) (P3HT) with HAuCl4. Specifically, the addition of HAuCl4 causes an increase in the two-dimensional molecular ordering of P3HT and a remarkable reduction in the contact resistance at the electrode/semiconductor interface with no pre- or post-treatment process. This phenomenon is understood in terms of broadening of the transport manifold in the organic semiconductor, induced by HAuCl4, which results in a reduction in the hole-injection barrier and an enhancement of the interfacial stability at the contact between the printed electrode and the semiconductor layers.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10132
- DOI
- 10.1149/1.3152571
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 12, no. 8, page. H312 - H314, 2009-01
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