Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film Transistors
SCIE
SCOPUS
- Title
- Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film Transistors
- Authors
- Kang, Yun-Seong; Lee, Yeol-Hyeong; Kim, Woo-Sic; Cho, Yong-Jung; Park, JeongKi; Kim, GeonTae; Kim, Ohyun
- Date Issued
- 2019-02
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- The relationship between detrapping of electrons and negative gate bias in amorphous InGaZnO thin film transistors (a-IGZO TFTs) is investigated. In these devices, positive gate-bias stress (PBS) traps electrons at the gate insulator (GI) or at the interface between the channel and the GI, and creates acceptor-like states, which the authors speculate may be oxygen interstitials or zinc vacancies. In contrast, negative gate-bias stress (NBS) increases donor-like states, which are speculated as ionized oxygen vacancies, near the interface. When subsequent negative gate bias (SNB) is applied to a TFT after PBS, electrons are detrapped and donor-like states are increased simultaneously. Measurements with various SNB and PBS conditions suggests that SNB accelerates detrapping of electrons, and that those detrapped electrons interrupts the increase of donor-like states.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/101236
- DOI
- 10.1002/pssa.201800621
- ISSN
- 1862-6300
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 216, no. 4, 2019-02
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