Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors
SCIE
SCOPUS
- Title
- Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors
- Authors
- Maeng, WJ; Kim, H
- Date Issued
- 2006-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta(NMe2)(5) (pentakis(dimethylamino)Ta, PDMAT) and Ti(NMe2)(4) [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta2O5 by PDMAT with water or oxygen plasma produced pure Ta2O5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for TiO2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta2O5.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10115
- DOI
- 10.1149/1.2186427
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 9, no. 6, page. G191 - G194, 2006-01
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