Effect of HfSiON thickness on electron trap distributions of HfSiON/SiO2 nMOSFET under PBTI
SCIE
SCOPUS
- Title
- Effect of HfSiON thickness on electron trap distributions of HfSiON/SiO2 nMOSFET under PBTI
- Authors
- ROH, GIYOUN; KIM, HYEOK JIN; Kwon, Y.; KANG, BONG KOO
- Date Issued
- 2019-09
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- The effect of HfSiON thickness on electron trap distributions under positive bias temperature instability (PBTI) was investigated in HfSiON/SiO2 nMOSFET. Trap distributions of HfSiON/SiO2 nMOSFET were observed by charging and discharging electrons at pre-existing or newly-generated traps. Experimental results show that the peak values of electron trap density shifted to deeper electron trap energy level (E-t) with increasing stress field E-str and stress time t(s). Compared to the Thick HfSiON device, the Thin HfSiON device had lower trap density and slower Et-shift; as a result, the Thin HfSiON device had lower threshold voltage-shift Delta Vth and larger power-law time exponent n of PBTI than the Thick HfSiON device. Low Delta Vth is beneficial for lifetime of HfSiON/SiO2 nMOSFET but large n is not, so the effect of HfSiON thickness on distribution of electron trap must be quantified to enable optimization of HfSiON thickness to yield reliable HfSiON/SiO2 nMOSFETs.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/101135
- DOI
- 10.1016/j.microrel.2019.06.045
- ISSN
- 0026-2714
- Article Type
- Article
- Citation
- MICROELECTRONICS RELIABILITY, vol. 100, 2019-09
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- There are no files associated with this item.
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