Atomic layer deposition of hafnium silicate thin films using HfCl2[N-SiMe3)(2)](2) and H2O
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- Title
- Atomic layer deposition of hafnium silicate thin films using HfCl2[N-SiMe3)(2)](2) and H2O
- Authors
- Nam, WH; Rhee, SW
- Date Issued
- 2004-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- Hafnium silicate thin films were deposited on Si substrate for alternative gate dielectrics by atomic layer deposition (ALD) using a single metallorganic precursor, dichlorobis[bis(trimethylsilyl)amido]hafnium (HfCl2[N(SiMe3)(2)](2)), and H2O as an oxidant in the temperature range of 150-400 degreesC. The effect of pulse time for purge and precursor injection confirmed the self-limiting characteristic of ALD. Film growth rate and composition were investigated as a function of deposition temperature. Growth rate reached to a maximum value of 1.3 Angstrom/cycle at 250 degreesC and rapidly decreased to 0.3 Angstrom/cycle at 400 degreesC. The composition analysis of as-deposited films using X-ray photoelectron spectroscopy showed that the composition ratio of Si/(Hf + Si) increased linearly from 0.15 to 0.3 as the deposition temperature increased. (C) 2004 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/10107
- DOI
- 10.1149/1.1651392
- ISSN
- 1099-0062
- Article Type
- Article
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 7, no. 4, page. C55 - C56, 2004-01
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