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Structural evolution of Pd/GaN(0001) films during postannealing SCIE SCOPUS

Title
Structural evolution of Pd/GaN(0001) films during postannealing
Authors
Kim, CCKim, WHJe, JHKim, DWBaik, HKLee, SM
Date Issued
2000-07
Publisher
ELECTROCHEMICAL SOC INC
Abstract
We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN(0001) at room temperature. The crystallization of the remnant, disordered Pd was caused by the growth of the interfacial grains during annealing up to 600 degrees C. The origin of the Pd epitaxy on GaN( 0001) was attributed to a 6/7 matched interface structure, wherein 6-Ga atomic distances match 7-Pd atomic distances. Remarkably, the Pd film was, by the Pd-Ga reaction, completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at higher a temperature of 700 degrees C. (C) 2000 The Electrochemical Society. S1099-0062(00)00-02-067-8. All rights reserved.
URI
https://oasis.postech.ac.kr/handle/2014.oak/10102
DOI
10.1149/1.1391141
ISSN
1099-0062
Article Type
Article
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 3, no. 7, page. 335 - 337, 2000-07
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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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