The F− Sensitivity Enhancement of SiNW ISFET with Poly-LaF3 Sensing Membrane
- Title
- The F− Sensitivity Enhancement of SiNW ISFET with Poly-LaF3 Sensing Membrane
- Authors
- BAEK, CHANG KI; HYEONTAK, KWAK; Hyeonsu Cho; Kihyun Kim
- Date Issued
- 2019-07-02
- Publisher
- 대한전자공학회(IEIE)
- Abstract
- Abstract Silicon nanowire ion sensitive field effect transistors (SiNW ISFETs) with polycrystalline lanthanum fluoride (poly-LaF3) is presented to enhance its sensing characteristics for detection of fluoride ion (F−). The poly-LaF3 sensing membrane is deposited by using a thermal evaporation process with the substrate temperature of 600 °C on the SiNW channel. The electrical characteristics and current sensitivity for F− are investigated as SiNW width is varied between 100 nm, 500 nm, and 2000 nm. The 100 nm SiNW width ISFETs exhibits the lowest subthreshold swing of 141 mV/dec and the highest current sensitivity of 182.15%. This improved sensing characteristic of SiNW ISFETs comes from the enlarged gate controllability as diminishing the SiNW width.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/100343
- Article Type
- Conference
- Citation
- Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), 2019-07-02
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