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Cited 5 time in webofscience Cited 6 time in scopus
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Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Title
Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
Authors
Lee, Seung HeeJeong, HokyeongNgomeOkello, Odongo FrancisXiao, ShiyuMoon, SeokhoKim, DongYeongKim, Gi-YeopLo, Jen-luPeng, Yu-ChainCheng, Bing-MingMiyake, HidetoChoi, Si-YoungKim, Jong Kyu
Date Issued
2019-07
Publisher
NATURE PUBLISHING GROUP
Abstract
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 degrees C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 degrees C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/100066
ISSN
2045-2322
Article Type
Article
Citation
SCIENTIFIC REPORTS, vol. 9, no. 1, 2019-07
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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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